Thin film transistor and method of producing same
AssigneeCanon Kabushiki Kaisha
InventorsKenji Takahashi, Ryo Hayashi
Life of this patent
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Abstract
A first gate electrode (2) is formed on a substrate (1); a first gate insulating layer (3) is formed so as to cover the first gate electrode (2); a semiconductor layer (4) including an oxide semiconductor is formed on the first gate insulating layer (3); a second gate insulating layer (7) is formed on the semiconductor layer (4); a second gate electrode (8) having a thickness equal to or larger than a thickness of the first gate electrode (2) is formed on the second gate insulating layer (7); and a drain electrode (6) and a source electrode (5) are formed so as to be connected to the semiconductor layer (4).
Claims9
A thin film transistor comprising:
- a substrate;
- a first gate electrode formed on the substrate;
- a first gate insulating layer formed so as to cover the first gate electrode;
- a semiconductor layer comprising an oxide semiconductor and formed on the first gate insulating layer;
- a second gate insulating layer formed on the semiconductor layer;
- a second gate electrode formed on the second gate insulating layer;
- and
- a drain electrode and a source electrode formed so as to be connected to the semiconductor layer,
- wherein the second gate electrode has a thickness larger than a thickness of the first gate electrode.
A method of producing a thin film transistor, comprising:
- forming a first gate electrode on a substrate;
- forming a first gate insulating layer on the first gate electrode;
- forming a semiconductor layer comprising an oxide semiconductor on the first gate insulating layer;
- forming a drain electrode and a source electrode on the semiconductor layer;
- forming a second gate insulating layer on the drain electrode and the source electrode;
- and
- forming a second gate electrode on the second gate insulating layer.
A method of producing a thin film transistor, comprising:
- forming a first gate electrode on a substrate;
- forming a first gate insulating layer on the first gate electrode;
- forming a drain electrode and a source electrode on the first gate insulating layer;
- forming a semiconductor layer comprising an oxide semiconductor on the drain electrode and the source electrode;
- forming a second gate insulating layer on the semiconductor layer;
- and
- forming a second gate electrode on the second gate insulating layer.
A method of producing a thin film transistor, comprising:
- forming a first gate electrode on a substrate;
- forming a first gate insulating layer on the first gate electrode;
- forming a semiconductor layer comprising an oxide semiconductor on the first gate insulating layer;
- forming a second gate insulating layer on the semiconductor layer;
- forming a second gate electrode on the second gate insulating layer;
- forming a protective layer on the second gate electrode and the semiconductor layer;
- and
- forming contact electrodes so as to be connected to the semiconductor layer.
A method of producing a thin film transistor, comprising:
- forming a first gate electrode on a substrate;
- forming a first gate insulating layer on the first gate electrode;
- forming a semiconductor layer comprising an oxide semiconductor on the first gate insulating layer;
- forming an insulating film on the semiconductor layer;
- forming a conductive film on the insulating film;
- performing light exposure through the first gate electrode;
- etching the conductive film to form a second gate electrode;
- etching the insulating film to form a second gate insulating layer;
- forming a protective layer on the second gate electrode and the semiconductor layer;
- and
- forming contact electrodes so as to be connected to the semiconductor layer.
Dependencies are inferred from the claim text.