Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device

A method of manufacture of a nitride semiconductor light-emitting chip, the method comprising:

• a step of preparing a nitride semiconductor substrate having as a principal growth plane a plane having off-angles in both a- and c-axis directions relative to an m plane, the off-angle in the a-axis direction being larger than the off-angle in the c-axis direction;
• and
• a step of stacking, on the principal growth plane of the nitride semiconductor substrate, by an epitaxial growth method, a nitride semiconductor layer including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein
• the step of stacking the nitride semiconductor layer includes a step of forming, from a nitride semiconductor substrate side, the n-type semiconductor layer, the active layer, and the p-type semiconductor layer.