US 2010/0243981 A1 · Phase-change random access memory device

Abstract

A phase-change random access memory device includes an isolation layer structure, an insulating interlayer, a spacer, a switching element and a phase-change material (PCM) layer. The isolation layer structure is in a trench on a substrate, defines an active region in the substrate, and has a recess at an upper portion thereof. The insulating interlayer has an opening partially exposing the active region and the isolation layer structure. The spacer is on a sidewall of the opening and fills the recess. The switching element is in the opening on the exposed active region. The PCM layer is electrically connected to the switching element.

Claims15

Dependent claims

A phase-change random access memory device, comprising:

an isolation layer structure in a trench on a substrate, the isolation layer structure defining an active region in the substrate and having a recess at an upper portion thereof;
an insulating interlayer having an opening partially exposing the active region and the isolation layer structure;
a spacer on a sidewall of the opening, the spacer filling the recess;
a switching element in the opening on the exposed active region;
and
a phase-change material layer electrically connected to the switching element.

3 more elements

Dependencies are inferred from the claim text.

Phase-change random access memory device

Life of this patent

Phase-change random access memory device

Life of this patent

Abstract

Claims15