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AssigneeMitsubishi Chemical Corporation
InventorsYasuhiro Kawase, Makoto Ikemoto, Atsushi Itou, Matoko Ishikawa
Estimating the term…
To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.
A cleaning solution for a substrate of a semiconductor device, which comprises the following components (A) and (B):
A cleaning solution for a substrate of a semiconductor device, which comprises an organic acid and has an etching rate of a wiring material on the substrate of a semiconductor device of at most 0.06 nm/minute and a removing efficiency of particle contaminants of at least 95%.
A process for producing a substrate of a semiconductor device, which comprises forming a wiring material layer on said substrate and chemical mechanical polishing (CMP) its surface, and cleaning the wiring material layer after the CMP by means of a cleaning solution which comprises the following components (A) and (B):
Dependencies are inferred from the claim text.