Dielectric porcelain composition for use in electronic devices

Abstract

The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant εr is high, the Qf value is high and, the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO2 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain α-Al2O3 in the structure can be obtained, and the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high.

Dependencies are inferred from the claim text.