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US 2010/0167554 A1Published application
Methods forming high dielectric target layer
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Cheol LEE, Ki-Yeon PARK, Jun-Noh LEE
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Abstract
In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site.
Claims20
A method of forming a target layer comprising:
- chemisorbing a first precursor including a first central atom and a ligand associated with the first central atom on a first reaction site of an object;
- removing at least one of the first central atom and the ligand in the chemisorbed first precursor to form a second reaction site;
- and
- chemisorbing a second precursor including a second central atom on the second reaction site.
1 more element
A method of forming a target layer comprising:
- chemisorbing a first precursor including a first central atom on a first portion of a reaction site of an object;
- and
- chemisorbing a second precursor on a second portion of the reaction site of the object, the second portion of the reaction site being different from the first portion of the reaction site.
A method of forming a target layer comprising:
- partially transforming a first reaction site into a second reaction site;
- chemisorbing a first precursor including a first central atom on the first reaction site;
- and
- chemisorbing a second precursor on the second reaction site.
1 more element
Dependencies are inferred from the claim text.