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US 2010/0167547 A1Published application
Polishing liquid
AssigneeFUJIFILM Corporation
InventorTetsuya KAMIMURA
Life of this patent
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Abstract
A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0.
Claims11
A polishing liquid for a chemical mechanical polishing of a semiconductor device, the polishing liquid comprising:
- (a) a carboxylic acid compound having one or more carboxy groups,
- (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid,
- (c) a benzotriazole derivative,
- (d) an anionic surfactant, and
- (e) an oxidizing agent,
- the polishing liquid having a pH of from 5.0 to 8.0.
3 more elements
A chemical mechanical polishing method of polishing a surface of a semiconductor device, comprising:
- polishing the surface of the semiconductor device by relative movement of a polishing pad and the surface of the semiconductor device while supplying a polishing liquid to the polishing pad,
- the polishing liquid comprising:
- (a) a carboxylic acid compound having one or more carboxy groups,
- (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid,
- (c) a benzotriazole derivative,
- (d) an anionic surfactant, and
- (e) an oxidizing agent,
- the polishing liquid having a pH of from 5.0 to 8.0.
5 more elements
Dependencies are inferred from the claim text.