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US 2010/0167545 A1Published application
Method and Composition for Chemical Mechanical Planarization of A Metal
AssigneeDuPont Air Products NanoMaterials LLC
InventorsXiaobo Shi, Bentley J. Palmer, Rebecca A. Sawayda, Fadi Abdallah Coder, Victoria Perez
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Abstract
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.
Claims20
A method for chemical mechanical planarization of a surface having at least one feature thereon comprising a metal, said method comprising the steps of:
- A) placing a substrate having the surface having the at least one feature thereon comprising the metal in contact with a polishing pad;
- B) delivering a polishing composition comprising:
- a) an abrasive;
- b) an ionic liquid compound;
- and
- c) an oxidizing agent;
- and
- C) polishing the substrate with the polishing composition.
5 more elements
A polishing composition comprising:
- c) an abrasive;
- d) an ionic liquid compound;
- and
- c) an oxidizing agent.
1 more element
Dependencies are inferred from the claim text.