Methods of Titanium Deposition

A method of titanium deposition comprising:

• exposing a silicon-containing surface and an electrically insulative surface to titanium-containing material;
• the exposing forming titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface;
• forming a nitride-containing cap over the titanium silicide;
• and
• wherein the silicon-containing surface consists of conductively-doped silicon and is part of a conductively-doped region that extends into the substrate, wherein the nitride-containing cap is electrically conductive, and further comprising forming an electrically conductive structure electrically connected to the conductively-doped region through at least the nitride-containing cap and the titanium silicide.

A method of titanium deposition, comprising:

• placing a substrate in a chamber;
• flowing hydrogen-containing material into the chamber and exposing a surface of the substrate to hydrogen of the hydrogen-containing material;
• flowing titanium-containing material into the chamber to deposit titanium on the surface;
• and
• wherein the hydrogen-containing material is flowed into the chamber prior to the flowing of the titanium-containing material, wherein the hydrogen-containing material is flowed into the chamber in the absence of any titanium being flowed into the chamber, and wherein the titanium is flowed into the chamber in the absence of any hydrogen being flowed into the chamber.

A method of titanium deposition, comprising:

• placing a substrate in a chamber;
• flowing hydrogen-containing material into the chamber and exposing a surface of the substrate to hydrogen of the hydrogen-containing material;
• flowing titanium-containing material into the chamber to deposit titanium on the surface;
• wherein the hydrogen-containing material is flowed into the chamber prior to the flowing of the titanium-containing material;
• wherein the hydrogen-containing material is flowed into the chamber in the absence of any titanium being flowed into the chamber;
• wherein the hydrogen-containing material is removed from within the chamber prior to the flowing of the titanium-containing material;
• and
• wherein any hydrogen flowed into the chamber with the titanium-containing material is contained by the titanium-containing material.

A method of titanium deposition, comprising the following steps in the following sequence:

• placing a substrate in a chamber, the substrate comprising a semiconductor-containing surface and an electrically insulative surface;
• flowing hydrogen-containing material into the chamber and exposing the semiconductor-containing and electrically insulative surfaces of the substrate to hydrogen of the hydrogen-containing material;
• removing all of the hydrogen-containing material from the chamber;
• and
• while there is no hydrogen-containing material within the chamber, flowing titanium-containing material into the chamber to selectively deposit titanium over the semiconductor-containing surface and not over the electrically insulative surface.

A method of titanium deposition, comprising:

• placing a monocrystalline silicon-containing substrate in a chamber;
• flowing hydrogen-containing material into the chamber and exposing a surface of the substrate to hydrogen of the hydrogen-containing material;
• flowing titanium-containing material into the chamber to deposit titanium on the surface;
• wherein the hydrogen-containing material is flowed into the chamber prior to the flowing of the titanium-containing material;
• wherein the hydrogen-containing material is flowed into the chamber in the absence of any titanium being flowed into the chamber;
• wherein the hydrogen-containing material is a first hydrogen-containing material;
• wherein a second hydrogen-containing material is flowed into the chamber with the titanium-containing material;
• and
• wherein the first hydrogen-containing material is different in composition from the second hydrogen-containing material.