Method of manufacturing semiconductor device, cleaning method and cleaning control apparatus

A method of manufacturing a semiconductor device, comprising:

• loading a substrate into a process chamber;
• forming a film on the substrate by supplying a first process gas, which comprises at least one of a plurality of elements constituting the film and is capable of depositing a film by itself, to an inside of the process chamber through a first gas introducing part, and supplying a second process gas, which comprises at least one of the others of the plurality of elements constituting the film and is incapable of depositing a film by itself, to the inside of the process chamber through a second gas introducing part;
• unloading the substrate from the process chamber after the film is formed on the substrate;
• performing a first cleaning process so as to remove a first deposition substance attached to an inner wall of the first gas introducing part by supplying a cleaning gas to the first gas introducing part;
• and
• performing a second cleaning process so as to remove a second deposition substance attached to the inside of the process chamber and having a chemical composition different from that of the first deposition substance by supplying the cleaning gas to the inside of the process chamber through a third gas introducing part connected to a lower side of the process chamber at a position where the substrate is not placed,
• wherein in the performing of the first cleaning process, cleaning conditions are set according to accumulated supply time of the first process gas supplied to the inside of the process chamber through the first gas introducing part, and
• in the performing of the second cleaning process, cleaning conditions are set according to an accumulated thickness of the film formed on the substrate.