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US 2010/0167531 A1Published application
Semiconductor device and method for manufacturing the same
OwnerJeong-Ho Parkinventor
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the same includes sequentially laminating a first dielectric film, an etch-blocking film and a second dielectric film on and/or over a semiconductor substrate, forming a photosensitive film mask to open a trench region in the second dielectric film, etching the second dielectric film using the photosensitive film mask as an etching mask until the etch-blocking film is exposed to form the trench, and then forming a copper metal layer in the trench at uniform thickness.
Claims20
A method comprising:
- sequentially laminating a first dielectric film, an etch-blocking film and a second dielectric film over a semiconductor substrate;
- forming a photosensitive film mask over the second dielectric film to expose a trench region in the on the second dielectric film;
- forming a trench in the on the second dielectric film by etching the second dielectric film using the photosensitive film mask as an etching mask;
- forming a copper metal layer over the second dielectric film and embedding the trench;
- and
- polishing the copper metal layer until the second dielectric film is etched such that the copper metal layer remains only in the trench.
3 more elements
A method comprising:
- sequentially laminating a first dielectric film, a second dielectric film and a polish-blocking film over a semiconductor substrate;
- forming a photosensitive film mask over the polish-blocking film to expose a trench region in the second dielectric film;
- forming a trench by etching the second dielectric film and the polish-blocking film using the photosensitive film mask as an etching mask;
- forming a copper metal layer over the polish-blocking film and embedding the trench;
- and then
- polishing the copper metal layer until the top of the polish-blocking film is etched to allow the copper metal layer to remain only in the trench.
3 more elements
A method comprising:
- sequentially laminating a first dielectric film, a second dielectric film and a polish-blocking film;
- forming a photosensitive film mask over the polish-blocking film to expose a trench region in the second dielectric film;
- forming a trench in the second dielectric film using the photosensitive film mask as an etching mask;
- forming a copper metal layer over the polish-blocking film and embedding the trench;
- and then
- polishing the copper metal layer to expose an uppermost surface of the polish-blocking film.
3 more elements
Dependencies are inferred from the claim text.