Method for introducing impurities and apparatus for introducing impurities

A method for introducing impurities, comprising:

• a first step for irradiating a plasma containing He to a surface of a substrate so as to form an amorphous layer at the surface of the substrate;
• a second step for introducing impurities into the surface of the substrate;
• and
• an annealing step after the second step,
• wherein the first step is performed at the same time as the second step,
• the annealing step is a step for activating the impurities.

A method for introducing impurities, comprising:

• a first step for irradiating plasma containing He to a surface of a film so as to form an amorphous layer at the surface of the film;
• a second step for introducing impurities into the surface of the film;
• and
• an annealing step after the second step,
• wherein the first step is performed at the same time as the second step,
• the annealing step is a step for activating the impurities.