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US 2010/0167501 A1Published application
Separation of semiconductor devices
AssigneeTinggi Technologies Pte Limited
InventorsXuejun Kang, Shu Yuan, Jenny Lam, Shiming Lin
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Abstract
A method of fabricating semiconductor devices is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers is intact. This preserves the electrical, optical, and mechanical properties of the plurality of epitaxial layers.
Claims30
A method of fabricating semiconductor devices, the method comprising:
- providing a substrate with a plurality of epitaxial layers mounted on the substrate;
- and
- separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers are intact while preserving electrical, mechanical and optical properties of the plurality of epitaxial layers.
A method of fabricating semiconductor devices, the method comprising:
- providing a substrate with a plurality of epitaxial layers mounted on the substrate;
- applying patterns to the plurality of epitaxial layers;
- forming an outer layer between the patterns;
- the outer layer being at least 0.3 mm thick and being for at least one selected from the group consisting of:
- a new substrate, a structural support, a heat sink, a heat dissipater, a current dissipater, and as a terminal, for the semiconductor devices;
- and
- separating the substrate from the plurality of epitaxial layers.
4 more elements
Dependencies are inferred from the claim text.