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US 2010/0167497 A1Published application
Use of field oxidation to simplify chamber fabrication in microfluidic devices
AssigneeSTMicroelectronics S.r.l.
InventorsMing Fang, Fuchao Wang
Life of this patent
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Abstract
A method includes growing a first oxide region concurrently with a second oxide region in a substrate and forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region. The method also includes removing the first oxide region to form a chamber, forming a first MOS transistor adjacent the second oxide region, and forming a second MOS transistor separated from the first MOS transistor by the second oxide region.
Claims19
A method, comprising:
- forming a first oxide region and a second oxide region concurrently in a substrate;
- forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region;
- removing the first oxide region to form a chamber;
- forming a first MOS transistor adjacent the second oxide region;
- and
- forming a second MOS transistor separated from the first MOS transistor by the second oxide region.
3 more elements
A method, comprising:
- forming a plurality of field oxide regions concurrently in a substrate;
- forming a first opening to expose a first surface of a first field oxide region;
- forming a first MOS transistor on the substrate adjacent a second field oxide region;
- forming a second MOS transistor on the substrate, the second transistor separated from the first MOS transistor by the second field oxide region;
- and
- removing the first field oxide region to form a chamber.
3 more elements
A method, comprising:
- forming a masking layer overlying a substrate;
- etching a first and a second opening in the masking layer to expose portions of the substrate;
- growing a first and a second oxide region concurrently in the substrate at the first and second openings;
- forming a nozzle to expose a first surface of the first oxide region;
- forming a first and a second transistor separated by the second oxide region;
- and
- removing the first oxide region to form a chamber.
4 more elements
A method, comprising:
- forming a first oxide region and a second oxide region concurrently in a substrate;
- forming a conductive layer overlying the first oxide region;
- exposing a top surface of the first oxide region through at least one opening in the conductive layer;
- forming a first transistor adjacent the second oxide region;
- forming a second transistor separated from the first transistor by the second oxide region;
- and
- removing the first oxide region through the at least one opening in the conductive layer to form a recess.
4 more elements
Dependencies are inferred from the claim text.