Embedded trap direct tunnel non-volatile memory

A method for fabricating a split channel, embedded trap direct tunnel memory non-volatile memory device, the method comprising:

• forming a plurality of trenches in a substrate;
• forming a diffusion region in the substrate at the bottom of each trench;
• forming a pair of diffusion regions that are each adjacent to either side of each trench;
• forming a bi-stable element on opposing sidewalls of each trench, the bi-stable elements comprising an oxynitride layer formed over the sidewall and an embedded trap layer formed over the oxynitride layer;
• and
• forming a fixed threshold element in series with each bi-stable element, the fixed threshold elements comprising a control gate separated from the sidewalls by an oxide layer, the control gate shared by the bi-stable elements and the fixed threshold elements in each trench, the control gate separated from the embedded trap layers by a coupling medium that is formed adjacent to the embedded trap layers such that coupling is enhanced between the embedded trap layers and the control gate.