Localized temperature control during rapid thermal anneal

A method of forming a semiconductor structure comprising:

• providing a substrate;
• forming on a first section of said substrate at least one first device, a first isolation region adjacent to said first device, and fill structures adjacent to said first isolation region;
• and
• simultaneously forming on a second section of said substrate at least one second device, a second isolation region adjacent to said second device and said fill structures adjacent to said second isolation region,
• wherein a first pattern of said fill structures in said first section is such that a first amount of an isolation material in said first isolation region is exposed and wherein a second pattern of said fill structures in said second section is such that a second amount of said isolation material in said second isolation region is exposed, and
• wherein said forming of said fill structures comprises forming a surplus of fill structures such that some of said fill structures can be selectively removed in order to form said first pattern and said second pattern.

A method of forming a semiconductor structure comprising:

• providing a substrate;
• forming on a first section of said substrate at least one first device, a first isolation region adjacent to said first device, and fill structures adjacent to said first isolation region;
• simultaneously forming on a second section of said substrate at least one second device, a second isolation region adjacent to said second device and said fill structures adjacent to said second isolation region, wherein a first pattern of said fill structures in said first section is such that a first amount of an isolation material in said first isolation region is exposed and wherein a second pattern of said fill structures in said second section is such that a second amount of said isolation material in said second isolation region is exposed;
• and
• predetermining said first amount of said isolation material exposed in said first section and said second amount of said isolation material exposed in said second section so that said first device and said second device exhibit predetermined performance characteristics following a rapid thermal anneal.