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US 2010/0167475 A1Published application
Semiconductor device and producing method thereof
AssigneeFujitsu Microelectronics Limited
InventorYasuo Nara
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Abstract
A semiconductor device manufacturing method includes forming a fin region over a substrate, forming a dummy gate electrode over the fin region, forming a first insulating film over the dummy gate electrode and the fin region, polishing the first insulating film until the dummy gate electrode is exposed, removing part of the exposed dummy gate electrode to form a trench, forming a gate insulator over the surface of the fin region exposed in the trench, and forming a gate electrode over the gate insulator.
Claims11
A semiconductor device manufacturing method comprising:
- forming a fin region over a substrate, the fin region having an apex portion and a sidewall portion and extending in a first direction;
- forming a dummy gate electrode over the fin region, the dummy gate electrode extending in a second direction different from the first direction;
- forming a first insulating film over the dummy gate electrode and the fin region;
- polishing the first insulating film until the dummy gate electrode is exposed;
- removing at least part of the exposed dummy gate electrode to form a trench, a surface of the fin region being exposed in the trench;
- forming a gate insulator over the surface of the fin region exposed in the trench;
- and
- forming a gate electrode over the gate insulator.
5 more elements
Dependencies are inferred from the claim text.