Implantation shadowing effect reduction using thermal bake process
AssigneeTexas Instruments Incorporated
InventorsYiming Gu, Shaofeng Yu, James Blatchford
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Abstract
A method of forming a resist feature includes forming a resist layer over a semiconductor body, and selectively exposing the resist layer. The method further includes performing a first bake of the selectively exposed resist layer, and developing the selectively exposed resist layer to form a resist feature having a corner edge associated therewith, thereby exposing a portion of the semiconductor body. A second bake of the developed selectively exposed resist layer is then performed, thereby rounding the corner edge of the resist feature.
Claims20
A method of forming a resist feature, comprising:
- forming a resist layer over a semiconductor body;
- selectively exposing the resist layer;
- performing a first bake of the selectively exposed resist layer;
- developing the selectively exposed resist layer to form a resist feature having a corner edge associated therewith, thereby exposing a portion of the semiconductor body;
- performing a second bake of the developed selectively exposed resist layer, thereby rounding the corner edge of the resist feature.
A method of forming a resist structure, comprising:
- forming a chemical amplified deep ultraviolet resist layer over a semiconductor body surface;
- patterning the resist layer to form a resist feature having a corner edge;
- and
- rounding the corner edge of the resist structure with a bake process.
A method of forming a semiconductor device, comprising:
- forming an active area of a first conductivity type within a semiconductor body of a second conductivity type;
- forming a gate structure in the active area;
- forming a resist layer over the gate structure and the active area;
- patterning the resist layer to expose the gate structure and at least a portion of the active area, the patterned resist layer having a corner edge;
- rounding the corner edge of the patterned resist layer with a bake process;
- and
- implanting dopant at a non-perpendicular angle with respect to a surface of the active area into the exposed portion of the active area.
Dependencies are inferred from the claim text.