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US 2010/0167463 A1Published application
Method for Fabricating Resistive Memory Device
AssigneeHynix Semiconductor Inc.
InventorMin-Gyu Sung
Life of this patent
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Abstract
A method for fabricating a resistive memory device includes forming a lower electrode including a metal nitride layer over a substrate, forming a metal oxide layer used as a variable resistance material by oxidizing a part of the metal nitride layer, and forming an upper electrode on the metal oxide layer.
Claims19
A method for fabricating a resistive memory device, the method comprising:
- forming a lower electrode including a metal nitride layer over a substrate;
- forming a metal oxide layer used as a variable resistance material by oxidizing a part of the metal nitride layer;
- and
- forming an upper electrode on the metal oxide layer.
1 more element
A method for fabricating a resistive memory device, the method comprising:
- forming a lower electrode over a substrate;
- forming a variable resistance material layer on the lower electrode by supplying an oxygen gas into a chamber where the lower electrode is deposited;
- and
- forming an upper electrode on the variable resistance material layer.
1 more element
A method for fabricating a resistive memory device, the method comprising:
- forming a lower electrode over a substrate, wherein the lower electrode includes a material whose oxidation is suppressed in a selective oxidation process;
- forming a material layer on the lower electrode, wherein the material layer is prone to being oxidized in the selective oxidation process;
- forming a variable resistance material layer by selectively oxidizing the material layer through the selective oxidation process;
- and
- forming an upper electrode on the variable resistance material layer.
2 more elements
Dependencies are inferred from the claim text.