Method for fabricating cmos image sensor
OwnerChung-Kyoung Junginventor
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Abstract
A method for fabricating a CMOS image sensor which reduces occurrence of a dark current. The method includes forming a photodiode in a semiconductor substrate, forming an insulating film over and contacting the semiconductor substrate and the photodiode, respectively, forming a hard mask film over and contacting the insulating film, exposing an area of the insulating film corresponding spatially to the photodiode by performing a first etching process on the hard mask film, and then forming a trench in the insulating film by performing a second etching process using the etched hard mask film as a mask.
Claims20
A method comprising:
- forming a plurality of photodiodes in a semiconductor substrate at fixed intervals;
- forming an interlayer insulating film over an entire surface of the semiconductor substrate including the photodiodes;
- forming a hard mask film over an entire surface of the interlayer insulating film;
- forming a photoresist pattern over the hard mask film for exposing a hard mask film region corresponding to a photodiode region;
- etching the hard mask film by performing a first etching process using the photoresist pattern as a mask;
- and then
- selectively etching the interlayer insulating film by performing a second etching process using the etched hard mask film as a mask.
A method comprising:
- forming a photodiode in a semiconductor substrate;
- forming an insulating film over and contacting the semiconductor substrate and the photodiode, respectively;
- forming a hard mask film over and contacting the insulating film;
- exposing an area of the insulating film corresponding spatially to the photodiode by performing a first etching process on the hard mask film;
- and then
- forming a trench in the insulating film by performing a second etching process using the etched hard mask film as a mask.
A method comprising:
- forming a photodiode in a semiconductor substrate;
- forming an oxide film over the semiconductor substrate and the photodiode, respectively;
- forming a hard mask film over the oxide film;
- exposing an area of the oxide film corresponding spatially to the photodiode by performing a dry etching process on the hard mask film;
- and then forming a trench by performing a wet etching process on the oxide film.
Dependencies are inferred from the claim text.