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US 2010/0167456 A1Published application
Image sensor and method of fabricating the same
AssigneeSamsung Electronics Cop., Ltd.
InventorYun-Ki Lee
Life of this patent
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Abstract
An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate.
Claims8
A method of fabricating an image sensor, comprising:
- preparing a semiconductor substrate, the semiconductor substrate having a first substrate and a second substrate stacked sequentially, the first substrate and the second substrate each having conductivity;
- forming a pad region on the semiconductor substrate, the pad region being in contact with the first substrate through a predetermined region of the second substrate, and impurity ions of the pad region having a concentration higher than impurity ions of the second substrate;
- forming an insulating layer on the semiconductor substrate to cover the pad region;
- selectively removing the first substrate from the semiconductor substrate;
- and
- forming a pad hole in the second substrate and in the insulating layer such that the pad hole is aligned on the pad region of the second substrate.
3 more elements
-12. (canceled)
Dependencies are inferred from the claim text.