Method for fabrication of cmos image sensor

Abstract

Disclosed is a method for fabrication of a CMOS image sensor capable of improving adhesion between an interlayer insulating film and photoresist. According to embodiments in this disclosure, the CMOS image sensor fabrication method may include: forming a plurality of photodiodes over a semiconductor substrate at regular intervals; forming an interlayer insulating film over the semiconductor substrate including the plurality of photodiodes; applying photoresist over the entirety of the interlayer insulating film; hard-baking the photoresist; conducting exposure and development of the photoresist to expose a part of the interlayer insulating film corresponding to the photodiodes, thereby completing a photoresist pattern; and using the photoresist pattern as a mask to selectively etch the exposed part of the interlayer insulating film.

Dependencies are inferred from the claim text.