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US 2010/0167453 A1Published application
Methods of forming an image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsGi Bum Kim, Yun Ki Lee
Life of this patent
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Abstract
Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.
Claims18
A method of forming an image sensor comprising:
- providing a single crystalline semiconductor layer including at least one photodiode on a support substrate;
- forming a material layer including dopants on the single crystalline semiconductor layer;
- and
- forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.
1 more element
Dependencies are inferred from the claim text.