Solid-state imaging element and method for producing the same

A method for producing a solid-state imaging element having a silicided region in which surfaces of a source/drain region and a gate electrode of a transistor are at least silicided;

• and a non-silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are not silicided, the method comprising the steps of:
• forming a gate electrode on a semiconductor layer;
• forming an insulating film to cover the semiconductor layer and the gate electrode;
• etching the insulating film to form a sidewall on a side surface of the gate electrode;
• forming a source/drain region in the semiconductor layer using the gate electrode and the sidewall as masks;
• forming a hydrogen supply film to cover the gate electrode, the sidewall, the source/drain region, and a light receiving region formed in the semiconductor layer to generate charges by light irradiation;
• forming a salicide block film on the hydrogen supply film;
• removing the hydrogen supply film and the salicide block film except for the non-silicided region;
• and
• forming a metal silicide film by forming a metal film on a substrate and then thermally treating the metal film to silicide an upper part of the gate electrode and an upper part of the source/drain region in the silicided region based on reaction of the metal film with silicon.