Method for manufacturing back side illumination image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorYONG GEUN LEE
Life of this patent
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Abstract
Disclosed is a method for manufacturing a back side illumination image sensor. The method includes defining a pixel area by forming a first isolation area in a first substrate; forming a photo detecting unit buried in the pixel area; forming an ion implantation layer on the photo detecting unit; growing a second substrate on the first substrate having the ion implantation layer; forming a logic unit electrically connected to the first substrate on the second substrate; forming an insulting layer and an interconnection on the second substrate; and exposing the photo detecting unit by grinding a backside of the first substrate.
Claims9
A method for manufacturing a back side illumination image sensor, the method comprising:
- defining a pixel area by forming a first isolation area in a first substrate;
- forming a photo detecting unit buried in the pixel area;
- forming an ion implantation layer on the photo detecting unit;
- growing a second substrate on the first substrate having the ion implantation layer;
- forming a logic unit electrically connected to the first substrate on the second substrate;
- forming an insulting layer and an interconnection on the second substrate;
- and
- exposing the photo detecting unit by grinding a backside of the first substrate.
A method for manufacturing a back side illumination image sensor, the method comprising:
- defining a pixel area by forming a first isolation area in a first substrate;
- forming a photo detecting unit buried in the pixel area at a depth corresponding to a depth of the first isolation area;
- forming an ion implantation layer in a region ranging from a top surface of the photo detecting unit to a top surface of the first substrate by implanting ions into the pixel area remaining over the photo detecting unit;
- growing an epitaxial silicon layer on the first substrate having the ion implantation layer;
- forming a transistor electrically connected to the photo detecting unit on the epitaxial silicon layer;
- forming an insulting layer and an interconnection on the epitaxial silicon layer having the transistor;
- and
- exposing the photo detecting unit by grinding a backside of the first substrate.
Dependencies are inferred from the claim text.