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US 2010/0167432 A1Published application
Method of manufacturing semiconductor device
AssigneeNEC Electronics Corporation
InventorTakahisa Abiru
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: forming a first pad and a second pad over a substrate; forming a first insulating film over the second pad without forming the first insulating film over the first pad; forming a metal film over the first pad and the second pad; forming an electrode over the first pad with the metal film interposed therebetween; selectively removing the metal film over the second pad; and removing the first insulating film over the second pad.
Claims6
A method of manufacturing a semiconductor device, comprising:
- forming a first pad and a second pad over a substrate;
- forming a first insulating film over said second pad without forming the first insulating film over said first pad;
- forming a metal film over said first pad and said second pad;
- forming an electrode over said first pad with said metal film interposed therebetween;
- selectively removing said metal film over said second pad;
- and
- removing said first insulating film over said second pad.
4 more elements
Dependencies are inferred from the claim text.