Plasma etching apparatus and plasma etching method

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using a plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• and
• a first exhaust device connected to the vacuum processing chamber;
• wherein
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, and a second valve disposed on the gas bypath pipe, and wherein a variable conductance valve is disposed between the second exhaust device and the second valves, wherein in the plasma etching method,
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, the method comprises opening the second valve of the gas line in advance and setting the flow rate of the mass flow controller to a value other than zero, and at the same time, controlling an opening of the variable conductance valve so that the value of a pressure P1 between the second valve and the variable conductance valve of the gas line is equal to or greater than a pressure Po between the first valve and the vacuum processing chamber of the gas line and equal to or smaller than 1.2 times the value of pressure Po, and at a timing for switching conditions, opening the first valve of the gas line and closing the second valve of the gas line.

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using a plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• and
• a first exhaust device connected to the vacuum processing chamber;
• wherein
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, and a second valve disposed on the gas bypath pipe, and wherein a variable conductance valve is disposed between the second exhaust device and the second valves, wherein in the plasma etching method,
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, the method comprises opening the second valve of the gas line in advance and setting the flow rate of the mass flow controller to a flow rate value according to the subsequent condition, and at the same time, controlling an opening of the variable conductance valve so that the value of a pressure P1 between the second valve and the variable conductance valve of the gas line is equal to or greater than a pressure Po between the first valve and the vacuum processing chamber of the gas line and equal to or smaller than 1.2 times the value of pressure Po, and at a timing for switching conditions, opening the first valve of the gas line and closing the second valve of the gas line.

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using a plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• and
• a first exhaust device connected to the vacuum processing chamber;
• wherein
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, and a second valve disposed on the gas bypath pipe, and wherein a variable conductance valve is disposed between the second exhaust device and the second valves, wherein in the plasma etching method,
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, the method comprises opening the second valve of the gas line in advance and setting the flow rate of the mass flow controller to a flow rate value according to the subsequent condition, and at a timing for switching conditions, opening the first valve of the gas line, closing the second valve of the gas line, and controlling the opening of the variable conductance valve so that a value of a pressure P1 between the second valve and the variable conductance valve of the gas line is set greater than a pressure P2 between the variable conductance valve and the second exhaust device of the gas line.

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using a plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• and
• a first exhaust device connected to the vacuum processing chamber;
• wherein
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, and a second valve disposed on the gas bypath pipe, and wherein at least either each of the mass flow controllers, the first valves and the second valves are directly connected so as to form an integrated gas system, or a variable conductance valve is disposed between the second exhaust device and the second valves, wherein in the plasma etching method,
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, switching of gases is performed by opening the second valve of the gas line in advance and setting the flow rate of the mass flow controller to a value other than zero, and at a timing for switching conditions, opening the first valve of the gas line and closing a total gas flow rate immediately after switching conditions is set to an intermediate value between that of the current etching condition and that of the subsequent etching condition.

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using the plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• and
• a first exhaust device connected to the vacuum processing chamber;
• wherein
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, and a second valve disposed on the gas bypath pipe, and wherein at least either each of the mass flow controllers, the first valves and the second valves are directly connected so as to form an integrated gas system, or a variable conductance valve is disposed between the second exhaust device and the second valves, wherein in the plasma etching method,
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, switching of gases is performed by opening the second valve of the gas line in advance and setting the flow rate of the mass flow controller to a value other than zero, and at a timing for switching conditions, opening the first valve of the gas line and closing the second valve of the gas line;
• and a total gas flow rate immediately after switching conditions is set to a value greater than that of the subsequent etching condition if the pressure according to the subsequent etching condition is higher than the current etching condition, and set to a value smaller than that of the subsequent etching condition if the pressure according to the subsequent etching condition is lower than the current etching condition.

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using a plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• and
• a first exhaust device connected to the vacuum processing chamber;
• wherein
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, and a second valve disposed on the gas bypath pipe, and wherein at least either each of the mass flow controllers, the first valves and the second valves are directly connected so as to form an integrated gas system, or a variable conductance valve is disposed between the second exhaust device and the second valves, wherein in the plasma etching method,
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, switching of gases is performed by opening the second valve of the gas line in advance and setting the flow rate of the mass flow controller to a value other than zero, and at a timing for switching conditions, closing the second valve of the gas line at first, and thereafter, opening the first valve of the gas line;
• and a total gas flow rate immediately after switching conditions is set to a value greater than that of the subsequent etching condition if the pressure according to the subsequent etching condition is higher than the current etching condition, and set to a value smaller than that of the subsequent etching condition if the pressure according to the subsequent etching condition is lower than the current etching condition.

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using a plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• and
• a first exhaust device connected to the vacuum processing chamber;
• wherein
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, and a second valve disposed on the gas bypath pipe, and wherein at least either each of the mass flow controllers, the first valves and the second valves are directly connected so as to form an integrated gas system, or a variable conductance valve is disposed between the second exhaust device and the second valves, wherein in the plasma etching method,
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, switching of gases is performed by opening the second valve of the gas line in advance and setting the flow rate of the mass flow controller to a value other than zero, and at the same time, controlling an opening of the variable conductance valve so that the value of a pressure P1 between the second valve and the variable conductance valve of the gas line is equal to or greater than a pressure Po between the first valve and the vacuum processing chamber of the gas line and equal to or smaller than 1.2 times the value of pressure Po, and at a timing for switching conditions, opening the first valve of the gas line and closing the second valve of the gas line;
• and a total gas flow rate immediately after switching conditions is set to a value greater than that of the subsequent etching condition if the pressure according to the subsequent etching condition is higher than the current etching condition, and set to a value smaller than that of the subsequent etching condition if the pressure according to the subsequent etching condition is lower than the current etching condition.

A plasma etching method for etching a sample by sequentially switching a plurality of gas conditions using a plasma etching apparatus comprising:

• a vacuum processing chamber;
• a gas pipe and a gas feed portion having a plurality of holes with an inner diameter smaller than an inner diameter of the gas pipe for supplying gas into the vacuum processing chamber;
• a gas supply system for supplying a mixed gas composed of a plurality of gases via the gas pipe and the gas feed portion to the vacuum processing chamber;
• a first exhaust device connected to the vacuum processing chamber;
• and
• a second exhaust device for evacuating exhaust gas from the first exhaust device;
• wherein in the plasma etching method,
• the gas supply system is structured so that the gases are supplied via respective mass flow controllers to the vacuum processing chamber, the mass flow controllers each equipped with a first valve disposed between the vacuum processing chamber, a gas bypath pipe branched off from a portion between the mass flow controller and the first valve so as to be connected to a second exhaust device, a second valve disposed on the gas bypath pipe, a third valve disposed between the second exhaust device and the second valve, a first manometer for measuring a pressure between the third valve and the second valve, and a second manometer for measuring a pressure between the third valve and the second exhaust device, wherein in the plasma etching method
• regarding a gas line that is not used in a current etching condition but used in a subsequent etching condition, the method comprises opening the second valve of the gas line in advance with the third valve closed, and setting the flow rate of the mass flow controller to a value other than zero, and thereafter, when the pressure of the first manometer becomes higher than that of the second manometer, opening the third valve, then at a timing for switching conditions, opening the first valve of the gas line and closing the second valve of the gas line.