Reflective-type mask blank for euv lithography

A method for manufacturing a reflective mask blank for EUV lithography, comprising:

• providing a substrate having a front surface and a rear surface;
• covering a portion of the substrate with a first covering member which prevents formation of a reflective layer;
• forming a reflective layer over the front surface of the substrate such that the portion covered with the first covering member forms a non-conducting portion which eliminates electrical conduction between the reflective layer and a chucking layer;
• forming an absorbing layer over the reflective layer such that the non-conducting portion eliminates electrical conduction between the absorbing layer and the chucking layer by forming the portion covered with at least one of the first covering member and a second covering member and preventing formation of the absorbing layer;
• and
• forming the chucking layer on the rear surface of the substrate such that the chucking layer is positioned to chuck the substrate to an electrostatic chuck.