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US 2010/0167186 A1Published application
Extreme ultraviolet photomask and methods and apparatuses for manufacturing the extreme ultraviolet photomask
AssigneeSamsung Electronics Co., Ltd.
InventorsIlyong Jang, SangGyun Woo, Sungmin Huh
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Abstract
A method of manufacturing a photomask includes forming an upper layer on a photomask substrate, and patterning the upper layer to form an upper pattern having an inclined sidewall, wherein patterning the upper layer includes anisotropically etching the upper layer using charged particles moving in parallel to a first direction inclined toward a top surface of the upper layer.
Claims31
A method of manufacturing a photomask, comprising:
- forming an upper layer on a photomask substrate;
- and
- patterning the upper layer to form an upper pattern having an inclined sidewall, wherein patterning the upper layer includes anisotropically etching the upper layer using charged particles moving in parallel to a first direction inclined toward a top surface of the upper layer.
A photomask, comprising:
- a photomask substrate;
- an absorbing pattern disposed on the photomask substrate;
- and
- a multilayer disposed between the absorbing pattern and the photomask substrate, wherein a top surface and one sidewall of the absorbing pattern define an acute angle.
1 more element
A photomask, comprising:
- a photomask substrate;
- an absorbing pattern disposed on the photomask substrate;
- and
- a multilayer disposed between the absorbing pattern and the photomask substrate, wherein the absorbing pattern has at least one sidewall to make an obtuse angle with a top surface of the absorbing pattern.
1 more element
A plasma etching chamber system, comprising:
- a chuck configured to support a substrate;
- a plasma generation portion configured to ionize an etching gas;
- and
- a position controller configured to control a position of the chuck, wherein the position controller includes an inclined angle controller configured to control an angle of a top surface of the chuck with respect to a moving direction of the ionized etching gas.
1 more element
Dependencies are inferred from the claim text.