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US 2010/0167181 A1Published application
Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same
AssigneeHynix Semiconductr Inc.
InventorYong Dae Kim
Life of this patent
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Abstract
A photomask for extreme ultraviolet (EUV) lithography includes: a substrate; a reflection layer disposed over the substrate and reflecting EUV light incident thereto; and an absorber layer pattern disposed over the reflection layer to expose a portion of the reflection layer and comprising a material having an extinction coefficient (k) to EUV radiation higher than that tantalum (Ta).
Claims23
A photomask for extreme ultraviolet (EUV) lithography, comprising:
- a substrate;
- a reflection layer disposed over the substrate and reflecting EUV light incident thereto;
- and
- an absorber layer pattern disposed over the reflection layer to expose a portion of the reflection layer, said absorber layer pattern comprising a material having an extinction coefficient (k) to EUV radiation higher than that of tantalum (Ta).
1 more element
A method for fabricating a photomask for EUV lithography, the method comprising:
- forming a reflection layer for reflecting EUV light incident thereto over a substrate;
- and
- forming, over the reflection layer, an absorber layer pattern exposing a portion of the reflection layer and absorbing the EUV light comprising a material having an extinction coefficient (k) to EUV radiation higher than that of tantalum (Ta).
A method for fabricating a photomask for a EUV lithography, the method comprising:
- forming a reflection layer for reflecting EUV light incident thereto over a substrate;
- sequentially forming a first polymer layer and a second polymer layer;
- transferring a pattern onto the first and second polymer layers;
- forming an undercut under the second polymer layer to expose a portion of the reflection layer;
- forming an absorber layer pattern for absorbing the EUV light incident thereto over the exposed surface of the reflection layer using a material having a higher extinction coefficient (k) to EUV radiation than that of tantalum (Ta);
- and
- removing the first and second polymer layers.
4 more elements
Dependencies are inferred from the claim text.