Reference wafer for calibration and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsHyun-Chul Lee, Jung-Taik Cheong, Gue-Hong Song, Ky-Hyun Han
Life of this patent
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Abstract
A reference wafer maintains laser accuracy and calibrates a camera and a laser of a semiconductor equipment. The reference wafer includes a first anti-reflection layer, an adhesive layer, a light absorption layer and a second anti-reflection layer that are stacked over a substrate, a light reflection layer formed over the second anti-reflection layer, and a protection layer formed over the light reflection layer.
Claims21
A reference wafer for calibrating a semiconductor equipment, the reference wafer comprising:
- a first anti-reflection layer, an adhesive layer, a light absorption layer and a second anti-reflection layer that are stacked over a substrate;
- a light reflection layer formed over the second anti-reflection layer;
- and
- a protection layer formed over the light reflection layer.
A reference wafer for calibrating a semiconductor equipment, the reference wafer comprising:
- a first anti-reflection layer, an adhesive layer, a light absorption layer and a second anti-reflection layer that are stacked over a substrate;
- a light reflection layer formed over the second anti-reflection layer;
- and
- a microgram layer formed over the light reflection layer.
A method for fabricating a reference wafer for calibrating a semiconductor equipment, the method comprising:
- stacking a first anti-reflection layer, an adhesive layer, a light absorption layer and a second anti-reflection layer over a substrate;
- stacking a light reflection layer and a protection layer over the second anti-reflection layer;
- etching the protection layer by using a photoresist pattern as an etch barrier to form a protection layer pattern having a vertical profile;
- and
- etching the light reflection layer by using the protection pattern as an etch barrier.
Dependencies are inferred from the claim text.