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US 2010/0166033 A1Published application
Semiconductor light-emitting device
AssigneeEpistar Corporation
InventorsMing-Ta CHIN, Kuo-Feng HUANG, Ping-Fei SHEN, Ching-Jen WANG, Shih-Pang CHANG
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Abstract
A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.
Claims19
A semiconductor device, comprising:
- a substrate;
- a first cladding layer over said substrate;
- an active region on said first cladding layer;
- and
- a second cladding layer on said active region;
- wherein said active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, said first type barrier layer being closer to said first cladding layer than said second type barrier layer.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a first cladding layer over said substrate;
- a multi-quantum-well (MQW) active region on said first cladding layer;
- and
- a second cladding layer on said active region;
- wherein said MQW active region includes a plurality of well-layer/barrier-layer pairs, a well layer of each said well-layer/barrier-layer pair serving as an active layer in which carriers may recombine radiatively to generate photons and a barrier layer of each said well-layer/barrier-layer pair being doped, and wherein said active region is formed of one of (AlxGa1-x)yIn1-yP (0≦x≦1, 0≦y≦1), AlGaAs, or InGaP.
3 more elements
A semiconductor device, comprising:
- a permanent substrate;
- a bonding layer over said permanent substrate;
- a second cladding layer over said bonding layer;
- an active region on said second cladding layer;
- and
- a first cladding layer on said active region;
- wherein said active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, said first type barrier layer being closer to said first cladding layer than said second type barrier layer.
4 more elements
Dependencies are inferred from the claim text.