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US 2010/0165759 A1Published application
Semiconductor Memory Device and Operation Method Thereof
AssigneeHynix Semiconductor Inc.
InventorByeong-Chan Choi
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Abstract
A semiconductor memory device includes a strobe signal generator for receiving a write command and generating a write strobe signal that defines an activation period variably according to an operation frequency, and a data transfer unit for transferring data from an external device to an internal data line in response to the write strobe signal.
Claims20
A semiconductor memory device, comprising:
- a strobe signal generator configured to receive a write command and to generate a write strobe signal that defines an activation period variably based on an operation frequency;
- and
- a data transfer unit configured to transfer data from an external device to an internal data line in response to the write strobe signal.
A method of driving a semiconductor memory device, comprising:
- activating a write strobe signal in response to a write command;
- sustaining activation of the write strobe signal during a period corresponding to an operation frequency;
- and
- transferring data from an external device to an internal data line in response to the write strobe signal.
1 more element
Dependencies are inferred from the claim text.