Non-Volatile Memory And Method With Continuous Scanning Time-Domain Sensing

A method of sensing in parallel a group of nonvolatile storage elements among an array thereof, comprising:

• providing a word line for accessing the group of storage elements positioned from an input end of the word line at positions x1, x2, . . . xi, . . . xn;
• providing an input scanning sense voltage VINWL(t) applied to the input end of the word line;
• providing a sense amplifier coupled to each storage element via a bit line to determine a detected conduction time when the storage element starts to conduct in response to the input scanning sense voltage;
• predetermining for each storage element a word line delay for the input scanning sense voltage to reach the storage element and a bit line delay for the conduction at the storage element to be detected by the sense amplifier;
• and
• determining the threshold voltage VTi of each storage element by evaluating the input scanning sense voltage VINWL(t) at the detected conduction time adjusted for the word line delay and the bit line delay.

A nonvolatile memory, comprising:

• an array of memory cells;
• a word line for accessing the group of memory cells in parallel;
• an input scanning sense voltage VINWL(t) supplied to said word line from the input end;
• a sense amplifier coupled to each storage element via a bit line to determine a detected conduction time when the storage element starts to conduct in response to the input scanning sense voltage;
• each storage element having a predetermined a word line delay for the input scanning sense voltage to reach the storage element and a bit line delay for the conduction at the storage element to be detected by the sense amplifier;
• and
• a controller for determining the threshold voltage VTi of each storage element by evaluating the input scanning sense voltage VINWL(t) at the detected conduction time adjusted for the word line delay and the bit line delay associated with said each storage element.