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US 2010/0165741 A1Published application
Dynamic pass voltage
AssigneeMicron Technology, Inc.
InventorJin-Man Han
Life of this patent
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Abstract
The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying sensing voltages to selected access lines for sensing selected memory cells. The method also includes applying a dynamic pass voltage to unselected access lines while the sensing voltages are applied.
Claims25
A method for operating a memory device, comprising:
- biasing an access gate of a selected memory cell with a sensing voltage for a particular time;
- biasing an access gate of an unselected memory cell coupled in series with the selected memory cell with a pass voltage;
- and
- decreasing the pass voltage during at least a portion of the particular time.
1 more element
A method of operating a memory device, comprising:
- biasing an access gate of a selected memory cell with a sensing voltage for a particular time;
- biasing an access gate of an unselected memory cell with a pass voltage;
- and
- linearly decreasing the pass voltage during at least a portion of the particular time.
1 more element
A memory device, comprising:
- an array of memory cells;
- control circuitry coupled to the array and configured to:
- bias an access gate of a selected memory cell of the array with a sensing voltage for a particular time;
- bias an access gate of an unselected memory cell of the array with a pass voltage, the unselected memory cell being coupled in series with the selected memory cell;
- and
- decrease the pass voltage during at least a portion of the particular time.
3 more elements
Dependencies are inferred from the claim text.