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US 2010/0165736 A1Published application
Flash memory device and manufacturing method of the same
AssigneeDongbu HiTek Co., Ltd.
InventorYOUNG JUN KWON
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Abstract
A flash memory device and a method for manufacturing the same are provided. The flash memory device can include first and second memory gates on a substrate, an oxide layer on sides of and on the substrate outside of the first and second memory gates, a source poly contact between the first and second memory gates, first and second select gates outside the first and second memory gates, a drain region outside the first and second select gates, and a metal contact on the drain region and the source poly contact.
Claims19
A flash memory device comprising:
- a first memory gate and a second memory gate on a substrate;
- an oxide layer along sides of the first memory gate, along sides of the second memory gate, on the substrate outside of the first memory gate, and on the substrate outside of the second memory gate;
- a source poly contact between the first memory gate and the second memory gate;
- a first select gate outside of the first memory gate;
- a second select gate outside of the second select gate;
- drain regions outside the first select gate and the second select gate;
- and
- metal contacts on the drain regions and on the source poly contact.
5 more elements
A method for manufacturing a flash memory device, comprising:
- forming a first oxide layer on a substrate;
- forming a nitride layer on the first oxide layer;
- forming a second oxide layer on the nitride layer;
- forming a first polysilicon layer on the second oxide layer;
- forming a first memory gate and a second memory gate by patterning the nitride layer, the second oxide layer, and the first polysilicon layer;
- forming a third oxide layer on the substrate including on the first memory gate and the second memory gate;
- forming a source poly contact between the first memory gate and the second memory gate;
- forming a first select gate outside of the first memory gate and a second select gate outside of the second memory gate;
- forming drain regions outside of the first select gate and the second select gate through an ion implantation process;
- and
- forming metal contacts on the drain regions and on the source poly contact.
8 more elements
Dependencies are inferred from the claim text.