Nonvolatile memory device and related methods of operation
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang-jin LEE, Choong-keun KWAK, Du-eung KIM
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Abstract
In a nonvolatile memory device, a program operation is performed on a plurality of nonvolatile memory cells by programming data having a first logic state in a first group among a plurality of selected memory cells selected from the plurality of nonvolatile memory cells during a first program interval of the program operation, and thereafter, programming data having a second logic state different from the first logic state in a second group among the selected memory cells during a second program interval of the program operation after the first program interval.
Claims21
1-10. (canceled)
A method of programming data to phase change memory cells in a nonvolatile memory, the nonvolatile memory including N groups of the memory cells, where N is greater than 2, the method comprising:
- supplying a first state program signal to M memory cells selected from each one of the N groups, where M is greater than 2, and then verify-reading the M memory cells to determine whether the M memory cells are in the first state;
- supplying a second state program signal different from the first state program signal to L memory cells selected from each one of the N groups, where L is greater than 2, and then verify-reading the L memory cells to determine whether the L memory cells are in the second state,
- wherein at least one memory cell in each one of the M memory cells and L memory cells is in each one of the N groups.
A method of performing a program operation in a nonvolatile memory device comprising a memory cell array of nonvolatile memory cells, the method comprising;
- setting a division program mode, wherein the division program mode determines a group of J memory cells in the memory cell array to be simultaneously programmed during a program operation;
- during a first program interval of the program operation, programming first state data to a first group of K memory cells selected from the J memory cells, wherein K is less than or equal to J;
- and
- during a second program interval of the program operation following the first program interval, programming second state data different from the first state data to a second group of L memory cells selected from the J memory cells, wherein L is less than or equal to J.
A memory device, comprising:
- a memory cell array including a plurality of nonvolatile memory cells;
- a mode selecting unit configured to set a division program mode, wherein the division program mode determines a group of J memory cells in the memory cell array to be simultaneously programmed during a program operation;
- and
- a program circuit configured during a first program interval of the program operation to program first state data to a first group of K memory cells selected from the J memory cells, wherein K is less than or equal to J, and further configured during a second program interval of the program operation following the first program interval to program second state data different from the first state data to a second group of L memory cells selected from the J memory cells, wherein L is less than or equal to J.
Dependencies are inferred from the claim text.