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US 2010/0165728 A1Published application
Phase change device having two or more substantial amorphous regions in high resistance state
AssigneeMacronix International Co., Ltd.
InventorsYEN-HAO SHIH, Chieh-Fang Chen, Hsiang-Lan Lung
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Abstract
Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.
Claims18
A memory device, comprising:
- a first electrode and a second electrode;
- and
- a memory element comprising phase change material and including first and second phase change active regions located between the first and second electrodes, wherein the first and second phase change active regions are in electrical series connection with the first and second electrodes, and adapted to store a single bit.
A memory device, comprising:
- a memory cell having a first electrode and a second electrode;
- a memory element comprising phase change material and including first and second active regions;
- and
- bias circuitry adapted to apply bias arrangements to the memory cell to store a bit, the bias arrangements including a first bias arrangement to store a first value of the bit by causing both the first and second active regions to adopt a high resistance state, and a second bias arrangement to store a second value of the bit by causing both the first and second active regions to adopt a low resistance state.
1 more element
Dependencies are inferred from the claim text.