Phase change memory
AssigneeIndustrial Technology Research Institute
InventorsShyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin
Life of this patent
Estimating the term…
Abstract
A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.
Claims19
A phase change memory, comprising:
- a phase change storage element;
- a transistor for operating current adjusting, having a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal;
- and
- a control circuit, having an output terminal coupled to the control terminal of the transistor and generating the control signal to limit the transistor in a linear region.
Dependencies are inferred from the claim text.