Semiconductor device and power converter using the same
AssigneeHitachi, Ltd.
InventorsJunichi Sakano, Kenji Hara, Shinji Shirakawa
Life of this patent
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Abstract
In a driving circuit, for controlling the turning on and off of a main semiconductor switching device of an insulated gate type, in an insulated gate semiconductor switching device for electric power conversion, bipolar semiconductor devices of an insulated gate control type, particularly insulated gate bipolar transistors (IGBTs) are used at the output stage of a circuit that controls the gate voltage of the main semiconductor switching device.
Claims11
A semiconductor device, wherein a driving circuit for controlling the turning on and off of a main semiconductor switching device of an insulated gate type uses an insulated gate bipolar semiconductor device at an output stage of a circuit that controls a gate voltage of the main semiconductor switching device.
Dependencies are inferred from the claim text.