Capacitor and method for fabricating the same
OwnerChul-Jin Yooninventor
Life of this patent
Estimating the term…
Abstract
A capacitor and method of fabricating a capacitor. A method of fabricating a capacitor may include forming a device isolation film on and/or over a semiconductor substrate, forming a polysilicon pattern on and/or over a device isolation film, forming a silicide on and/or over an upper portion of a polysilicon pattern, forming a capacitor insulating film covering a silicide, forming a pre-metal-dielectric (PMD) on and/or over a semiconductor substrate having a capacitor insulating film, and/or forming an upper metal electrode on and/or over a hole on and/or over a PMD, which may expose an insulating film opposite a region of a silicide.
Claims20
A method comprising:
- forming a device isolation film over a semiconductor substrate;
- forming a polysilicon pattern over said device isolation film;
- forming a silicide over an upper portion of said polysilicon pattern;
- forming a capacitor insulating film over the silicide;
- forming a pre-metal-dielectric over a surface of said semiconductor substrate including said capacitor insulating film;
- and
- forming an upper metal electrode over a hole formed over said pre-metal-dielectric, said hole exposing said insulating film opposite a region of the silicide.
An apparatus comprising:
- a device isolation film over a semiconductor substrate;
- a polysilicon pattern over said device isolation film;
- a silicide over an upper portion of said polysilicon pattern;
- a capacitor insulating film over the silicide;
- a pre-metal-dielectric over said capacitor insulating film;
- and
- an upper metal electrode over said pre-metal-dielectric opposite a region of the silicide.
The apparatus of claimed 12, wherein said capacitor insulating film is over an upper side of said polysilicon pattern, a surface of said spacer, and a surface of an active region of said semiconductor substrate.
Dependencies are inferred from the claim text.