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US 2010/0165356 A1Published application
Semiconductor optical element
AssigneeMitsubishi Electric Corporation
InventorKazuhisa Takagi
Life of this patent
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Abstract
A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.
Claims5
1-2. (canceled)
A semiconductor optical element comprising an active layer including quantum dots, wherein
- density of the quantum dots in a resonator direction in a portion of the active layer in which the density of photons is relatively high, is higher relative to the density of the quantum dots in a portion of the active layer in which the density of photons is relatively low,
- the semiconductor optical element is a Fabry-Perot semiconductor laser, and
- the density of the quantum dots is relatively higher in the vicinity of a light emission end surface.
A semiconductor optical element comprising an active layer including quantum dots, wherein
- density of the quantum dots in a resonator direction in a portion of the active layer in which the density of photons is relatively high, is higher relative to the density of the quantum dots in a portion of the active layer in which the density of photons is relatively low,
- the semiconductor optical element is a semiconductor optical amplifier, and
- the density of the quantum dots is relatively higher in the vicinity of a light emission end surface.
6-9. (canceled)
Dependencies are inferred from the claim text.