Spectroscopic scatterometer system
AssigneeKLA-Tencor Technologies Corporation
InventorsYiping Xu, Ibrahim Abdulhalm
Life of this patent
Estimating the term…
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AssigneeKLA-Tencor Technologies Corporation
InventorsYiping Xu, Ibrahim Abdulhalm
Estimating the term…
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.
A scatterometer for measuring one or more parameters of a periodic diffracting structure of a sample, said one or more parameters comprising shape of lines, linewidth, pitch, height and/or side wall angle of the periodic diffracting structure, said scatterometer comprising:
An instrument for measuring one or more parameters of a periodic diffracting structure located adjacent to a structure of a sample, said one or more parameters comprising shape of lines, linewidth, pitch, height and/or side wall angle of the periodic diffracting structure, said instrument comprising:
An instrument for measuring one or more parameters of a periodic diffracting structure of a sample, said one or more parameters comprising shape of lines, linewidth, pitch, height and/or side wall angle of the diffracting structure, comprising:
A scatterometer for measuring one or more parameters of a periodic diffracting structure of a sample, said one or more parameters comprising shape of lines, linewidth, pitch, height and/or side wall angle of the periodic diffracting structure, said scatterometer comprising:
A scatterometer for measuring one or more parameters of a periodic diffracting structure of a sample, said one or more parameters comprising shape of lines, linewidth, pitch, height and/or side wall angle of the structure, said scatterometer comprising:
A scatterometer for measuring one or more parameters of a periodic diffracting structure of a sample, said one or more parameters comprising shape of lines, linewidth, pitch, height and/or side wall angle of the structure, said scatterometer comprising:
A scatterometer for measuring one or more parameters of a periodic diffracting structure of a sample, said one or more parameters comprising shape of lines, linewidth, pitch, height and/or side wall angle of the structure, said scatterometer comprising:
Dependencies are inferred from the claim text.