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US 2010/0165159 A1Published application
Solid state imaging device
AssigneeSony Corporation
InventorTetsuro Kumesawa
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Abstract
A solid state imaging device in which Υ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.
Claims3
A solid state imaging device having a vertical overflow function, the solid state imaging device comprising:
- a semiconductor substrate;
- a p-type well region formed on the substrate;
- a photosensor portion formed on the p-type well region, the photosensor portion including an n-type semiconductor region and a p-type charge accumulation region formed on the surface of the n-type semiconductor region;
- and
- a substrate voltage value controller configured to change a potential applied to the semiconductor substrate from a high potential to a low potential in a stepwise manner during an exposure period, wherein said solid state imaging device is formed on a rear surface side of the semiconductor substrate, thereby increasing a potential barrier of the p-type well region from a low state to a high state in a corresponding stepwise manner.
2 more elements
Dependencies are inferred from the claim text.