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US 2010/0165095 A1Published application
Defect inspection device and defect inspection method for silicon wafer
AssigneeNippon Electro-Sensory Devices Corporation
InventorManabu Nakamura
Life of this patent
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Abstract
A defect inspection device for a silicon wafer comprises: an infrared light illumination which illuminates the silicon wafer with a light power that has been adjusted in accordance with a specific resistance value of the silicon wafer; and an imaging unit constituted by a line sensor array that is sensitive to infrared light, which captures the silicon wafer.
Claims11
A defect inspection device (1) for a silicon wafer (9), comprising:
- an infrared light illumination (3) which adjusts its light power in accordance with a specific resistance value of the silicon wafer (9) and illuminates the silicon wafer (9);
- and
- an imaging unit (2) constituted by a line sensor array that is sensitive to infrared light, which captures the silicon wafer (9).
A defect inspection method for a silicon wafer (9), comprising:
- adjusting a light power of an infrared light illumination (3) in accordance with a specific resistance value of the silicon wafer (9),
- illuminating the silicon wafer (9) by the infrared light illumination (3), and
- capturing the silicon wafer (9) by an imaging unit (2) constituted by a line sensor array that is sensitive to infrared light.
Dependencies are inferred from the claim text.