Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method for manufacturing the same improves performance of an inductor, wherein a PGS pattern formed in a spiral shape, like inductors, blocks electric current induced to a semiconductor substrate, removes effects of parasitic capacitance thereon and thereby improves performance of the inductor. In accordance with the method, the PGS pattern is formed in a spiral shape, like the inductor, to inhibit flow of induced current. As a result, flow of current induced to the semiconductor substrate, one of resistant conductors, can be blocked. In addition, the PGS pattern acts between the inductor and the semiconductor substrate, thus preventing current leakage to the semiconductor substrate. Furthermore, the PGS pattern is interposed between the inductor and the semiconductor substrate to form an inductor-inserted structure, thus enabling reduction in effects of parasitic capacitance generated between the inductor and the semiconductor substrate on the semiconductor substrate arranged thereunder.

Dependencies are inferred from the claim text.