Programmable fuse and anti-fuse elements and methods of changing conduction states of same

A programmable anti-fuse element comprising:

• a semiconducting substrate;
• an N-well in the semiconducting substrate;
• an electrically insulating layer over the N-well;
• and
• a gate electrode over the electrically insulating layer,
• wherein:
• the gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element.

A method of enabling electrical communication through a programmable anti-fuse element, the method comprising:

• providing a semiconducting substrate;
• forming an N-well in the semiconducting substrate;
• forming an electrically insulating layer over the N-well;
• forming a gate electrode over the electrically insulating layer, where the N-well, the electrically insulating layer, and the gate electrode are components of the programmable anti-fuse element;
• causing the gate electrode to have an n-type doping;
• applying an electric signal to the programmable anti-fuse element, the electric signal having an intensity sufficient to cause a breakdown of the electrically insulating layer.