Adjusting configuration of a multiple gate transistor by controlling individual fins

A method of configuring a transistor of a semiconductor device, the method comprising:

• determining a functional status of each of a plurality of semiconductor fins of said transistor;
• performing a comparison of said functional statuses of said plurality of semiconductor fins with a target configuration of said transistor;
• and
• individually connecting at least one of said plurality of semiconductor fins to at least one of a drain terminal and a source terminal of said transistor on the basis of said comparison.

A semiconductor device, comprising:

• a plurality of semiconductor fins, each of which comprises at least one end portion individually electrically accessible and a channel portion connecting to said end portion;
• a gate electrode structure formed adjacent to said channel portion of each of said plurality of semiconductor fins so as to enable controlling of channel regions provided in said channel portion;
• a controllable interconnect structure connecting to a first transistor terminal and to each of said individually electrically accessible end portions, said controllable interconnect structure being configured to individually control connection of each of said end portions to said first transistor terminal;
• and
• a second transistor terminal electrically connected to each of said channel portions.