Work Function Based Voltage Reference
AssigneeMicrochip Technology Incorporated
InventorGregory Dix
Life of this patent
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Abstract
A voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in different threshold voltages for each of the two otherwise substantially identical P-MOS transistors. The difference between these two threshold voltages is then used to create the voltage reference equal to the difference. The two P-MOS transistors are configured as a differential pair in the operational amplifier circuit and the output of the operational amplifier is used as the voltage reference.
Claims9
A voltage reference fabricated on an integrated circuit die, comprising:
- a first P-channel metal oxide semiconductor (P-MOS) transistor having an N-type polysilicon gate, wherein the N-type polysilicon gate causes the first P-MOS transistor to have a first threshold voltage;
- a second P-MOS transistor having a P-type polysilicon gate, wherein the P-type polysilicon gate causes the second P-MOS transistor to have a second threshold voltage;
- the first and second P-MOS transistors are configured as a differential pair of an operational amplifier;
- and
- the operational amplifier has an output voltage substantially equal to a difference between the first and the second threshold voltages.
9-14. (canceled)
Dependencies are inferred from the claim text.