Semiconductor device and method of manufacturing the same
AssigneeFujitsu Microelectronics Limited
InventorsSatoshi Takesako, Shinichi Akiyama, Tamotsu Owada
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Abstract
A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.
Claims11
A method of manufacturing a semiconductor device, comprising:
- forming an organic insulating film over a semiconductor substrate;
- irradiating an electron beam to a surface of the organic insulating film;
- forming recesses in the organic insulating film;
- forming a conductive material over the organic insulating film and in the recesses;
- and
- removing the conductive material over the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.
A semiconductor device, comprising:
- a semiconductor substrate;
- an organic insulating film having a first layer formed over the semiconductor substrate, and a second layer provided over the first layer and formed by substituting at least a part of a methyl group in the first layer with a hydroxy group;
- and
- a conductive material buried in recesses of the organic insulating film.
Dependencies are inferred from the claim text.